Search for: All records

We demonstrate a-axis YBa2Cu3O7−x/PrBa2Cu3O7−x/YBa2Cu3O7−x trilayers grown on (100) LaAlO3 substrates with improved interface smoothness. The trilayers are synthesized by ozone-assisted molecular-beam epitaxy. The thickness of the PrBa2Cu3O7−x layer is held constant at 8 nm, and the thickness of the YBa2Cu3O7−x layers is varied from 24 nm to 100 nm. X-ray diffraction measurements show all trilayers to have >97% a-axis content. The rms roughness of the thinnest trilayer is <0.7 nm, and this roughness increases with the thickness of the YBa2Cu3O7−x layers. The thickness of the YBa2Cu3O7−x layers also affects the transport properties: while all samples exhibit an onset of the superconducting transition at and above 85 K, the thinner samples show wider transition widths, ΔTc. High-resolution scanning transmission electron microscopy reveals coherent and chemically sharp interfaces and that growth begins with a cubic (Y,Ba)CuO3−x perovskite phase that transforms into a-axis oriented YBa2Cu3O7−x as the substrate temperature is ramped up. 

We report the in situ, direct epitaxial synthesis of (0001)-oriented PdCoO2 thin films on c-plane sapphire using ozone-assisted molecular-beam epitaxy. The resulting films have smoothness, structural perfection, and electrical characteristics that rival the best in situ grown PdCoO2 thin films in the literature. Metallic conductivity is observed in PdCoO2 films as thin as ∼2.0 nm. The PdCoO2 films contain 180° in-plane rotation twins. Scanning transmission electron microscopy reveals that the growth of PdCoO2 on the (0001) surface of Al2O3 begins with the CoO2 layer. 

Bismuth ferrite layers, ∼200-nm-thick, are deposited on SrRuO3-coated DyScO3(110)o substrates in a step-flow growth regime via adsorption-controlled molecular-beam epitaxy. Structural characterization shows the films to be phase pure with substrate-limited mosaicity (0.012° x-ray diffraction ω-rocking curve widths). The film surfaces are atomically smooth (0.2 nm root-mean-square height fluctuations) and consist of 260-nm-wide [11¯1]o-oriented terraces and unit-cell-tall (0.4 nm) step edges. The combination of electrostatic and symmetry boundary conditions promotes two monoclinically distorted BiFeO3 ferroelectric variants, which self-assemble into a pattern with unprecedentedly coherent periodicity, consisting of 145 ± 2-nm-wide stripe domains separated by [001]o-oriented 71° domain walls. The walls exhibit electrical rectification and enhanced conductivity. 

We systematically investigate the role of defects, introduced by varying synthesis conditions and by carrying out ion irradiation treatments, on the structural and ferroelectric properties of commensurately strained bismuth ferrite BixFe2−xO3 layers grown on SrRuO3-coated DyScO3(110)o substrates using adsorption-controlled ozone molecular-beam epitaxy. Our findings highlight ion irradiation as an effective approach for reducing through-layer electrical leakage, a necessary condition for the development of reliable ferroelectrics-based electronics. 

Abstract The ability to make controlled patterns of magnetic structures within a nonmagnetic background is essential for several types of existing and proposed technologies. Such patterns provide the foundation of magnetic memory and logic devices, allow the creation of artificial spin‐ice lattices, and enable the study of magnon propagation. Here, a novel approach for magnetic patterning that allows repeated creation and erasure of arbitrary shapes of thin‐film ferromagnetic structures is reported. This strategy is enabled by epitaxial Fe_0.52Rh_0.48thin films designed so that both ferromagnetic and antiferromagnetic phases are bistable at room temperature. Starting with the film in a uniform antiferromagnetic state, the ability to write arbitrary patterns of the ferromagnetic phase is demonstrated by local heating with a focused laser. If desired, the results can then be erased by cooling below room temperature and the material repeatedly re‐patterned.